The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals

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Фізико-технічні та математичні науки
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Відділення фізико-технічних проблем матеріалознавства
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Functional Materials
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Functional Materials, 2006, том 13
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Functional Materials, 2006, № 4
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dc.contributor.author	Pelikhaty, N.M.
dc.contributor.author	Rokhmanov, N.Ya.
dc.contributor.author	Onischnko, V.V.
dc.date.accessioned	2018-06-14T14:55:55Z
dc.date.available	2018-06-14T14:55:55Z
dc.date.issued	2006
dc.identifier.citation	The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals / N.M. Pelikhaty, N.Ya. Rokhmanov, V.V. Onischnko // Functional Materials. — 2006. — Т. 13, № 4. — С. 613-617. — Бібліогр.: 9 назв. — англ.	uk_UA
dc.identifier.issn	1027-5495
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/135078
dc.description.abstract	Behavior of internal friction δ and electric resistance in silicon single crystals with low dislocation density (10-100 cm⁻²) has been studied during of bombardment with α-particles. Effect of strengthening has been found as well as change of direct hysteresis into reverse one in amplitude dependence of internal friction at increasing α-irradiation dose rate. The fact is explained by blocking of charged dislocations by radiation-induced vacancies and areas of charge separetion formed due to secondary infrared irration.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	НТК «Інститут монокристалів» НАН України	uk_UA
dc.relation.ispartof	Functional Materials
dc.title	The influence of high energy irradiation on electrical and dissipative properties of silicon single crystals	uk_UA
dc.title.alternative	Вплив високоенергетичного опромінювання на електрчні і дисипативні властивості монокристалів кремнію	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA