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Перегляд Functional Materials, 2008, том 15 за автором "Grinyov, B.V."

Репозиторій DSpace/Manakin

Перегляд Functional Materials, 2008, том 15 за автором "Grinyov, B.V."

Сортувати за: Порядок: Результатів:

  • Effect of technology parameters on the quality of nZnSe(X)/Ni Schottky diodes 
    Katrunov, K.A.; Galchinetskii, L.P.; Grinyov, B.V.; Starzhinskiy, N.G.; Bendeberya, G.N.; Bondarenko, E.A. (Functional Materials, 2008)
    Effect of technology parameters on the quality of nZnSe(X)/Nl Schottky's surface barrier structure used as components of UV photosensitive detectors are studied. Both the spectrum and the total sensitivity of photodiodes ...
  • Integrated detectors of ionizing radiation based on ZnSe(Te)/pZnTe-nCdSe structures 
    Starzhinskiy, N.G.; Grinyov, B.V.; Gashin, P.A.; Focsha, A.A.; Galat, A.B.; Ryzhikov, V.D.; Katrunov, K.A.; Zenya, I.M. (Functional Materials, 2008)
    A new type of solid state integrated detector of ionizing radiation has been proposed. It has been shown that the properties of ZnSe(Te) crystals make it possible to develop integrated detectors with photoreceivers of a ...

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