Activation transport under quantum Hall regime in HgTe-based heterostructure

dc.contributor.author	Gudina, S.V.
dc.contributor.author	Neverov, V.N.
dc.contributor.author	Novik, E.G.
dc.contributor.author	Ilchenko, E.V.
dc.contributor.author	Harus, G.I.
dc.contributor.author	Shelushinina, N.G.
dc.contributor.author	Podgornykh, S.M.
dc.contributor.author	Yakunin, M.V.
dc.contributor.author	Mikhailov, N.N.
dc.contributor.author	Dvoretsky, S.A.
dc.date.accessioned	2018-01-19T16:41:25Z
dc.date.available	2018-01-19T16:41:25Z
dc.date.issued	2017
dc.identifier.citation	Activation transport under quantum Hall regime in HgTe-based heterostructure / S.V. Gudina, V.N. Neverov, E.G. Novik, E.V. Ilchenko, G.I. Harus, N.G. Shelushinina, S.M. Podgornykh, M.V. Yakunin , N.N. Mikhailov, S.A. Dvoretsky // Физика низких температур. — 2017. — Т. 43, № 4. — С. 605-611. — Бібліогр.: 34 назв. — англ.	uk_UA
dc.identifier.issn	0132-6414
dc.identifier.other	PACS: 73.63.Hs, 73.43.Qt
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/129428
dc.description.abstract	We have measured the temperature (2.9 K < T < 50 K) and magnetic field (0 T < B < 9 T) dependences of longitudinal and Hall resistivities for HgCdTe/HgTe/HgCdTe system with HgTe quantum well width of 20.3 nm. The activation analysis of the experimental magnetoresistivity traces has been used as a quantitative tool to probe inter-Landau level distances. The activation energies were determined from the temperature dependence of the longitudinal resistivity in the regions of quantized Hall plateaus (for the filling factors ν of 1, 2 and 3) and the indications of the large values of the g factor ≅ 30–75 were found.	uk_UA
dc.description.sponsorship	The research was carried out within the state assignment of FASO of Russia (theme “Spin” No. 01201463330), supported in part by RFBR (project No. 17–02–00330). Samples were grown on the funds of the project “Fundamental Research of Ural Branch of Russian Academy of Sciences, No 15-9-2-21”.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України	uk_UA
dc.relation.ispartof	Физика низких температур
dc.subject	XXI Уральская международная зимняя школа по физике полупроводников	uk_UA
dc.title	Activation transport under quantum Hall regime in HgTe-based heterostructure	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA