Radiation-stimulated processes in silicon structures with contacts based on TiN

dc.contributor.author	Nasyrov, M.U.
dc.contributor.author	Ataubaeva, A.B.
dc.date.accessioned	2017-06-18T10:43:17Z
dc.date.available	2017-06-18T10:43:17Z
dc.date.issued	2015
dc.identifier.citation	Radiation-stimulated processes in silicon structureswith contacts based on TiN / M.U. Nasyrov, A.B. Ataubaeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 2. — С. 220-225. — Бібліогр.: 25 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	DOI: 10.15407/spqeo18.02.220
dc.identifier.other	PACS 61.80.-x
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121819
dc.description.abstract	The influence of irradiation on the structural properties of titanium nitride films deposited on silicon wafers has been considered. It has been shown that depending on the energy, fluence and type of irradiation ion, observed are the increase of accumulated damages with decreasing the grain size, the grain size reduction with increasing the fluence, the increase of dislocation density and microstrains.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Radiation-stimulated processes in silicon structures with contacts based on TiN	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA