Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments

dc.contributor.author	Milenin, G.V.
dc.contributor.author	Red’ko, R.A.
dc.date.accessioned	2017-06-14T17:39:48Z
dc.date.available	2017-06-14T17:39:48Z
dc.date.issued	2016
dc.identifier.citation	Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments / G.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 279-284. — Бібліогр.: 29 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	DOI: 10.15407/spqeo19.03.279
dc.identifier.other	PACS 72.20.Jv, 75.60.Lr, 78.55.Cr
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121600
dc.description.abstract	Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented.	uk_UA
dc.description.sponsorship	The authors thank to V.V. Milenin for his interest and important notes.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA