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dc.contributor.author |
Milenin, G.V. |
|
dc.contributor.author |
Red’ko, R.A. |
|
dc.date.accessioned |
2017-06-14T17:39:48Z |
|
dc.date.available |
2017-06-14T17:39:48Z |
|
dc.date.issued |
2016 |
|
dc.identifier.citation |
Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments / G.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 279-284. — Бібліогр.: 29 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
|
dc.identifier.other |
DOI: 10.15407/spqeo19.03.279 |
|
dc.identifier.other |
PACS 72.20.Jv, 75.60.Lr, 78.55.Cr |
|
dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/121600 |
|
dc.description.abstract |
Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented. |
uk_UA |
dc.description.sponsorship |
The authors thank to V.V. Milenin for his interest
and important notes. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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