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Dynamic electrophysical characterization of porous silicon humidity sensing

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dc.contributor.author Bravina, S.
dc.contributor.author Morozovsky, N.
dc.contributor.author Boukroub, R.
dc.date.accessioned 2017-06-14T17:35:09Z
dc.date.available 2017-06-14T17:35:09Z
dc.date.issued 2006
dc.identifier.citation Dynamic electrophysical characterization of porous silicon humidity sensing / S. Bravina, N. Morozovsky, R. Boukroub // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 79-83. — Бібліогр.: 10 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS 07.07.DF
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/121597
dc.description.abstract The results of the investigation of changes of parameters of bipolar and unipolar dynamic current-voltage characteristics and transient currents as well as dynamic bipolar charge-voltage loops connected with the pulse change of humidity for the samples of por-Si are presented. The hysteresis view of charge-voltage and current-voltage curves is characteristic for poling processes in the space charge region similar to that observed in the case of typical ionic conductors. Observed phases of transformation of investigated electrophysical characteristics reflect the time sсale of processes in the consequence “adsorption – dissociation and transfer – desorption”. The efficiency of using the methods of dynamic electrophysical characterization for studying characteristics of porous materials under fast humidity changes was demonstrated. uk_UA
dc.description.sponsorship Authors gratefully acknowledge Conseil Regional of Nord-Pas-de-Calais for financial support (grant no 04140209). uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Dynamic electrophysical characterization of porous silicon humidity sensing uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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