Наукова електронна бібліотека
періодичних видань НАН України

Transducer based on surface plasmon resonance with thermal modification of metal layer properties

Репозиторій DSpace/Manakin

Показати простий запис статті

dc.contributor.author Kostiukevych, K.V.
dc.date.accessioned 2017-06-14T17:20:31Z
dc.date.available 2017-06-14T17:20:31Z
dc.date.issued 2016
dc.identifier.citation Transducer based on surface plasmon resonance with thermal modification of metal layer properties / K.V. Kostiukevych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 3. — С. 255-266. — Бібліогр.: 36 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other DOI: 10.15407/spqeo19.03.255
dc.identifier.other PACS 73.20.Mf, 78.20.-e
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/121586
dc.description.abstract With the purpose to improve such service characteristics of transducers on the basis of the surface plasmon resonance (SPR) as the sensitivity and stability, we have analyzed the influences of a structure and a relief of the surface of polycrystalline gold films, which are determined by technological conditions of their production and by the low-temperature annealing, on their optical characteristics, namely, the coefficients of refraction, extinction, and light scattering. It is shown that the mechanism of enhancement of the sensitivity of an SPR-based transducer consists in a decrease in the coefficient of extinction of a metal film, as the annealing temperature increases. At the optimum annealing temperature (120°C), we observed the smoothing of a small-scale roughness of the gold film surface, which decreases the scattering of plasmons, favors the defectless formation of protective nano-sized layers, and enhances the sensitivity and stability of the operation of SPR-based transducers. uk_UA
dc.description.sponsorship This research was performed in the framework of state project No. 0112U002349 “Physical and technological aspects of development of modern semiconductor materials and functional structures for nano- and optoelectronics”, approved Nov. 28, 2011, supported by National Academy of Sciences of Ukraine uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Transducer based on surface plasmon resonance with thermal modification of metal layer properties uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


Файли у цій статті

Ця стаття з'являється у наступних колекціях

Показати простий запис статті

Пошук


Розширений пошук

Перегляд

Мій обліковий запис