Porous nanostructured InP: technology, properties, application

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8
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Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 4
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dc.contributor.author	Arsentyev, I. N.
dc.contributor.author	Bobyl, A.B.
dc.contributor.author	Konnikov, S.G.
dc.contributor.author	Tarasov, I.S.
dc.contributor.author	Ulin, V.P
dc.contributor.author	Shishkov, M.V.
dc.contributor.author	Boltovets, N.S.
dc.contributor.author	Ivanov, V.N.
dc.contributor.author	Belyaev, A.E.
dc.contributor.author	Konakova, R.V.
dc.contributor.author	Kudryk, Ya.Ya.
dc.contributor.author	Kamalov, A.B.
dc.contributor.author	Lytvyn, P.M.
dc.contributor.author	Markovskiy, E.P.
dc.contributor.author	Milenin, V.V.
dc.contributor.author	Red’ko, R.A.
dc.date.accessioned	2017-06-14T16:55:09Z
dc.date.available	2017-06-14T16:55:09Z
dc.date.issued	2005
dc.identifier.citation	Porous nanostructured InP: technology, properties, application / I. N. Arsentyev, A.B. Bobyl, S.G. Konnikov, I.S. Tarasov, V.P Ulin, M.V. Shishkov, N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, R.V. Konakova, Ya.Ya. Kudryk, A.B. Kamalov, P.M. Lytvyn, E.P. Markovskiy, V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 95-104. — Бібліогр.: 18 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 81.05.Rm
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121572
dc.description.abstract	We prepared porous InP (100) substrates with a nanostructured surface relief on which InP epitaxial films were grown. The structure, morphological, and photoluminescence properties of nanostructured substrates and InP epilayers grown on them were studied. These InP epilayers grown on the porous and standard InP substrates were used to make microwave diodes. We showed the advantages of the diodes made on the porous substrates (over those made on the standard ones) caused by higher structural perfection of the InP epilayers grown on the porous substrates.	uk_UA
dc.description.sponsorship	The work was made in the framework of the Russia−Ukraine Program on Nanophysics and Nanoelectronics.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Porous nanostructured InP: technology, properties, application	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA