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dc.contributor.author |
Studenyak, I.P. |
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dc.contributor.author |
Bendak, A.V. |
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dc.contributor.author |
Rybak, S.O. |
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Izai, V.Yu. |
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Kúš, P. |
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dc.contributor.author |
Mikula, M. |
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dc.date.accessioned |
2017-06-14T16:46:48Z |
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dc.date.available |
2017-06-14T16:46:48Z |
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dc.date.issued |
2016 |
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dc.identifier.citation |
Optical studies of as-deposited and annealed Cu₇GeS₅I thin films / I.P. Studenyak, A.V. Bendak, S.O. Rybak, V.Yu. Izai, P. Kúš, M. Mikula // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 2. — С. 192-196. — Бібліогр.: 15 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
DOI: 10.15407/spqeo19.02.192 |
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dc.identifier.other |
PACS 78.40.Ha, 77.80.Bh |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/121563 |
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dc.description.abstract |
Cu₇GeS₅I thin films were obtained by non-reactive radio frequency magnetron sputtering onto silicate glass substrates. Optical transmission spectra of as-deposited and annealed Cu₇GeS₅I thin films were measured in the temperature interval 77–300 K. The temperature behaviour of Urbach absorption edge and dispersion of refractive index for as-deposited and annealed Cu₇GeS₅I thin films was analyzed. Influence of annealing on the optical parameters and disordering processes in Cu₇GeS₅I thin films was studied. |
uk_UA |
dc.description.sponsorship |
Andrii Bendak (contract number 51501903) is strongly grateful to the International Visegrad Fund scholarship for the funding of the project. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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dc.title |
Optical studies of as-deposited and annealed Cu₇GeS₅I thin films |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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