Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis

Домашня сторінка
→
Фізико-технічні та математичні науки
→
Відділення фізики і астрономії
→
Semiconductor Physics Quantum Electronics & Optoelectronics
→
Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8
→
Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 4
→
Переглянути статтю

dc.contributor.author	Belyaev, A.E.
dc.contributor.author	Bobyl, A.V.
dc.contributor.author	Boltovets, N.S.
dc.contributor.author	Ivanov, V.N.
dc.contributor.author	Konakova, R.V.
dc.contributor.author	Konnikov, S.G.
dc.contributor.author	Kudryk, Ya.Ya.
dc.contributor.author	Markovskiy, E.P.
dc.contributor.author	Milenin, V.V.
dc.contributor.author	Rudenko, E.M.
dc.contributor.author	Tereschenko, G.F.
dc.contributor.author	Ulin, V.P.
dc.contributor.author	Ustinov, V.M.
dc.contributor.author	Tsirlin, G.E.
dc.contributor.author	Shpak, A.P.
dc.date.accessioned	2017-06-14T16:46:32Z
dc.date.available	2017-06-14T16:46:32Z
dc.date.issued	2005
dc.identifier.citation	Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis / A.E. Belyaev, A.V. Bobyl, N.S. Boltovets, V.N. Ivanov, R.V. Konakova, S.G. Konnikov, Ya.Ya. Kudryk, E.P. Markovskiy, V.V. Milenin, E.M. Rudenko, G.F. Tereschenko, V.P. Ulin, V.M. Ustinov, G.E. Tsirlin, A.P. Shpak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 65-71. — Бібліогр.: 7 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 68.55.Ac, 81.15.-z, 85.30.Kk
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121562
dc.description.abstract	The n⁺-n-n⁺-n⁺⁺-GaAs epitaxial structures were MBE-grown on porous nanostructured and traditional (standard) heavily doped n⁺⁺-GaAs substrates. On their basis, we fabricated the Gunn diodes generating power output in the 44−59 GHz (first harmonic) and 101−104 GHz (second harmonic) frequency ranges. For both harmonics, the power output of the Gunn diodes grown on porous substrates was shown to be from 20 to 30 % higher than those grown on the flat ones.	uk_UA
dc.description.sponsorship	This work was performed in the framework of the Russian-Ukrainian Program on Nanophysics and Nanoelectronics.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA