Investigation of cadmium telluride films on silicon substrate

dc.contributor.author	Odarych, V.A.
dc.contributor.author	Sarsembaeva, A.Z.
dc.contributor.author	Sizov, F.F.
dc.contributor.author	Vuichyk, M.V.
dc.date.accessioned	2017-06-14T16:10:13Z
dc.date.available	2017-06-14T16:10:13Z
dc.date.issued	2005
dc.identifier.citation	Investigation of cadmium telluride films on silicon substrate / V.A. Odarych, A.Z. Sarsembaeva, F.F. Sizov, M.V. Vuichyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 4. — С. 55-59. — Бібліогр.: 7 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 68.35.-p, 73.20.-r
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121545
dc.description.abstract	Properties of cadmium telluride films on silicon substrate, distribution of thickness and refraction index over the sample area were investigated by the ellipsometric method. It was ascertained that the refraction index of cadmium telluride films on a silicon substrate was considerably less than that of monocrystalline CdTe and depends on the film thickness, increasing with the thickness growth.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Investigation of cadmium telluride films on silicon substrate	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA