Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2002, том 5
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Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 4
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Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing

Litvinov, V.L. ; Demakov, K.D. ; Agueev, O.A. ; Svetlichny, A.M. ; Konakova, R.V. ; Lytvyn, P.M. ; Lytvyn, O.S. ; Milenin, V.V.

Інший ID: PACS: 73.40.Ns, 73.30.+y

URI: http://dspace.nbuv.gov.ua/handle/123456789/121364

Посилання: Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing / V.L. Litvinov, K.D. Demakov, O.A. Agueev, A.M. Svetlichny, R.V. Konakova, P.M. Lytvyn, O.S. Lytvyn, V.V. Milenin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 457-464. — Бібліогр.: 12 назв. — англ.

Дата: 2002

Завантажень: 329

Evolution of structural and electrophysical parameters of Ni/SiC contacts at rapid thermal annealing

Анотація:

Using X-ray phase analysis, Auger electron spectroscopy and atomic force microscopy, we investigated structural-phase transformations in the Ni/n-21R-SiC system induced by rapid thermal annealing in a vacuum (pressure of 10-² Pa) in the 450-1100 °С temperature range. It was found that modification of contact I-V curves from barrier-type to ohmic is due to appearance of local contact areas with different barrier heights (among them areas with ohmic conduction). Generation of the above nonuniformities results from intense heterodiffusion of the system components, as well as formation and recrystallization of various nickel silicide phases (differing in stoichiometry) and degradation of planar uniformity of both interface and Ni film.

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