Modified optical OR and AND gates

dc.contributor.author	Srinivasulu, Avireni
dc.date.accessioned	2017-06-14T07:47:47Z
dc.date.available	2017-06-14T07:47:47Z
dc.date.issued	2002
dc.identifier.citation	Modified optical OR and AND gates / Avireni Srinivasulu // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 428-430. — Бібліогр.: 8 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 42.65.Pc
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121352
dc.description.abstract	This paper deals with optical OR and AND gate, using unijunction transistor (UJT), light emitting diode (LED), and photo-resistor (LDR). Effort is made to extend the development of the gates using UJT, LDR, and LED to work at 1.8 Vdc instead of 3 Vdc. The power dissipation is approximately 2 mW. These optical gates find application in the field of instrumentation, optical logic isolators, and fiber optics systems where intrinsic safety is of prime importance rather than speed of operation.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Modified optical OR and AND gates	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA