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Alloy scattering in quantum well wire structures of semiconductor ternaries

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dc.contributor.author Ibragimov, G.B.
dc.date.accessioned 2017-06-14T07:38:35Z
dc.date.available 2017-06-14T07:38:35Z
dc.date.issued 2002
dc.identifier.citation Alloy scattering in quantum well wire structures of semiconductor ternaries / G.B. Ibragimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 347-352. — Бібліогр.: 28 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS: 72.10.-d, 73.63.Hs
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/121340
dc.description.abstract We studied the effect of the alloy-disorder-scattering on the electron transport in a quasi-one-dimensional semiconductor. Performed were analytical calculations of the alloy-disorder-limited momentum relaxation time for carrier scattering in a cylindrical quantum wire using modeling wave functions, when the transverse part of the carrier wave function is taken as a Bessel function. It is found that the one-dimensional mobility is significantly greater than two-dimensional one. It is shown that the alloy-disorder-scattering-limited mobility increases with the increasing wire radius and increases with the increasing temperature. We compare our results with different scattering mechanisms for one-dimensional systems. Results are also included for the alloy composition dependence of the mobility. uk_UA
dc.description.sponsorship The author would like to thank М.I. Aliev, В.М. Askerov and F.М. Gashimzade for helpful discussions. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Alloy scattering in quantum well wire structures of semiconductor ternaries uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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