The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2000, том 3
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Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 4
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dc.contributor.author	Baranskii, P.I.
dc.contributor.author	Babich, V.M.
dc.contributor.author	Venger, E.F.
dc.contributor.author	Dotsenko, Yu.P.
dc.date.accessioned	2017-06-13T16:57:00Z
dc.date.available	2017-06-13T16:57:00Z
dc.date.issued	2000
dc.identifier.citation	The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation / P.I. Baranskii, V.M. Babich, E.F. Venger, Yu.P. Dotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 449-452. — Бібліогр.: 12 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 61.72.T, 72.20.M
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121218
dc.description.abstract	The magnetic field dependencies Dr^/r0 = f(H) were investigated for phosphorus-doped n-Si crystals at a temperature of 77.4 K in classical strong magnetic fields up to 200 kOe. We revealed and discuss some distinctions in the field dependencies of magnetoresistance for crystals doped from melt and those doped by nuclear transmutation. It is shown that mag-netoresistance ∆ρ⊥/ρ₀ in classical strong magnetic fields is due to the statistically distributed Herring-type defects in the crystals studied.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA