Effect of growth conditions on structure quality of KDP crystals

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2000, том 3
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Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 2
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dc.contributor.author	Salo, V.I.
dc.contributor.author	Tkachenko, V.F.
dc.contributor.author	Kolybayeva, M.I.
dc.contributor.author	Pritula, I.M.
dc.date.accessioned	2017-06-13T15:04:38Z
dc.date.available	2017-06-13T15:04:38Z
dc.date.issued	2000
dc.identifier.citation	Effect of growth conditions on structure quality of KDP crystals / V.I. Salo, V.F. Tkachenko, M.I. Kolybayeva, I.M. Pritula // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 203-206. — Бібліогр.: 4 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 61.66, 61.10.- i, Nz, 78.40.- q, 77.84.Fa
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121109
dc.description.abstract	The effect of different variable crystallization parameters (supersaturation, solution acidity, degree of the solution purity, hydrodynamic growth regime) on structural quality and optical homogeneity of KDP crystals grown at the angle of synchronism θ = 59° was studied by using X-ray analysis and UV spectroscopy. It is shown that each of the chosen parameters acting in a certain way changes (with the rest being constant) the real structure and optical characteristics of crystals.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Effect of growth conditions on structure quality of KDP crystals	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA