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dc.contributor.author |
Guseynov, N.A. |
|
dc.contributor.author |
Askerov, Sh.Q. |
|
dc.contributor.author |
Aslanov, Sh.S. |
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dc.contributor.author |
Agaev, M.N. |
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dc.contributor.author |
Gasanov, M.H. |
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dc.date.accessioned |
2017-06-13T11:35:54Z |
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dc.date.available |
2017-06-13T11:35:54Z |
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dc.date.issued |
2005 |
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dc.identifier.citation |
Technology of manufacturing the reliable silicon photoconverters with long operation time / N.A. Guseynov, Sh.Q. Askerov, Sh.S. Aslanov, M.N. Agaev, M.H. Gasanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 85-87. — Бібліогр.: 7 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS 84.60.Jt |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/120974 |
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dc.description.abstract |
We offer to use an amorphous metal alloy Al₈₀Ni₂₀ as ohmic contact and current-collecting tracks to silicon photoconverters (PC) based on p-n junctions. Technological processes for production of silicon photosensitive structures and film coatings with an amorphous structure are described. The data of the X-ray structure analysis of the metal alloy Al₈₀Ni₂₀ confirming amorphism were obtained. The key PC parameters are determined. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Technology of manufacturing the reliable silicon photoconverters with long operation time |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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