Characterization of ZnSe nanocrystals grown by vapor phase epitaxy

dc.contributor.author	Tishchenko, V.V.
dc.contributor.author	Kovalenko, A.V.
dc.date.accessioned	2017-06-13T06:02:14Z
dc.date.available	2017-06-13T06:02:14Z
dc.date.issued	2006
dc.identifier.citation	Characterization of ZnSe nanocrystals grown by vapor phase epitaxy / V.V. Tishchenko, A.V. Kovalenko // Физика низких температур. — 2006. — Т. 32, № 12. — С. 1545–1550. — Бібліогр.: 21 назв. — англ.	uk_UA
dc.identifier.issn	0132-6414
dc.identifier.other	PACS: 81.07.Bc, 81.15.Kk, 78.67.Bf
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/120867
dc.description.abstract	This paper reports the application of scanning electron microscopy, x-ray diffraction, and photoluminescence techniques for characterization of ZnSe nanocrystals grown on GaAs (100) substrate from the vapor phase. The applied characterization techniques show the evidence for coexistence of two sets of nanocrystals with rather different characteristic sizes. In addition, the lowest energy levels of spherically shaped nanocrystals are calculated in the framework of the effective-mass approximation and compared with photoluminescence data.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України	uk_UA
dc.relation.ispartof	Физика низких температур
dc.subject	Низкоразмерные и неупорядоченные системы	uk_UA
dc.title	Characterization of ZnSe nanocrystals grown by vapor phase epitaxy	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA