Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si

dc.contributor.author	Red’ko, S.M.
dc.date.accessioned	2017-06-12T17:54:45Z
dc.date.available	2017-06-12T17:54:45Z
dc.date.issued	2015
dc.identifier.citation	Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si / S.M. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 71-73. — Бібліогр.: 15 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	DOI: 10.15407/spqeo18.01.071
dc.identifier.other	PACS 78.55.Cr, 71.55.Eq
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/120722
dc.description.abstract	The long-term transformations of photoluminescence of GaN:Si treated with pulsed weak magnetic fields have been studied. The defect structure transformations have been inferred from the radiative recombination spectra within the range 350…650 nm at 300 K. A possible mechanism of observed modifications related with the magnetic field induced destruction of metastable complexes has been discussed.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA