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Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 2
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Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure
Інший ID:
PACS: 61,72Tt, 61,82Fk, 62.50p,73.61.-r, 73.30.+
Посилання:
Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure / W. Wierzchowski, A. Misiuk, K. Wieteska, J. Bak-Misiuk, W. Jung, A. Shalimov, W. Graeff, M. Prujszczyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 7-11. — Бібліогр.: 14 назв. — англ.
Підтримка:
The authors are grateful to Dr J. Ratajczak (Institute
of Electron Technology, Warsaw) for some TEM data.
Дата:
2005
Переглядів:
718
Завантажень:
411
Анотація:
Effect of stress created by Ar hydrostatic pressure (HP) up to 1.1 GPa during annealing at the high temperature (HT) 1070 K (HT-HP treatment) on microstructure of Czochralski grown silicon co-implanted with helium and hydrogen Si:(He,H) using the same doses of He+ and H₂+ (DH,He= 5·10¹⁶ cm⁻², at energy 50 and 150 keV, respectively) was investigated by means of X-ray (synchrotron) diffraction, transmission electron microscopy, and electrical measurements. The nanostructured sponge-like buried layers are formed in Si:(He,H) by annealing / high pressure treatment. Decreased interference, diffuse scattering and individual contrast are observed in the synchrotron topograms for HT-HP treated Si:(He,H). The treatment at 723 K and HP results in an additional donor formation as a sequence of the implantation-disturbed layer. The HP-mediated (retarded) out-diffusion of hydrogen and helium is in part responsible for the effects observed.
