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dc.contributor.author |
Mazur, Yu.I. |
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dc.contributor.author |
Tarasov, G.G. |
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dc.contributor.author |
Kuzmenko, E.V. |
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dc.contributor.author |
Belyaev, A.E. |
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dc.contributor.author |
Hoerstel, W. |
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dc.contributor.author |
Kraak, W. |
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dc.contributor.author |
Masselink, W.T. |
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dc.date.accessioned |
2017-06-11T14:07:18Z |
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dc.date.available |
2017-06-11T14:07:18Z |
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dc.date.issued |
1999 |
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dc.identifier.citation |
Quaternary semimagnetic Hg₁₋x₋yCdxMnySe crystals for optoelectronic application / Yu.I. Mazur, G.G. Tarasov, E.V. Kuz'menko, A.E. Belyaev, W. Hoerstel, W. Kraak, W.T. Masselink // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 37-45. — Бібліогр.: 32 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS: 72.15.Gd, 72.20. My, 73.61.Ga. |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/120254 |
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dc.description.abstract |
The peculiarities of the exchange interaction between the carrier spin and localized spin moments of magnetic ions in the close vicinity of semimetal-semiconductor transition have been studied on the example of semimagnetic quaternary solid solution Hg₁₋x₋yCdxMnySe (x = 0.10, y = 0.02, Eg = 45 meV) by means of Shubnikov-de Haas oscillations. It is shown that due to the s-p hybridization of electron wavefunctions the exchange constant α turns out in α complicated function of energy gap Eg and electron concentration which changes from positive αN₀ = 0.15 eV to negative αN₀ = -0.28 eV values which are typically accepted for wide gap semimagnetic semiconductors. |
uk_UA |
dc.description.sponsorship |
Authors are indebted to Dr. S.Yu. Paranchich for the high quality crystals preparation. This work is supported by the DFG grant N⁰ HO 1300/2-1 and 436UKR113/40/0 |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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dc.title |
Quaternary semimagnetic Hg₁₋x₋yCdxMnySe crystals for optoelectronic application |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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