Saddle point excitonic resonances in BiI3 layered single crystals

dc.contributor.author	Kudryavtsev, O.O.
dc.contributor.author	Lisitsa, M.P.
dc.contributor.author	Motsnyi, F.V.
dc.contributor.author	Virko, S.V.
dc.date.accessioned	2017-06-11T13:59:14Z
dc.date.available	2017-06-11T13:59:14Z
dc.date.issued	1999
dc.identifier.citation	Saddle point excitonic resonances in BiI3 layered single crystals / O.O. Kudryavtsev, M.P. Lisitsa, F.V. Motsnyi, S.V. Virko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 19-22. — Бібліогр.: 14 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 71.35. + z.
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/120249
dc.description.abstract	Excitonic resonances near the critical saddle point of M₁ sort by van Hove have been revealed for the first time in the BiI₃ layered semiconductor. Their main parameters are estimated.	uk_UA
dc.description.sponsorship	The authors are grateful to O.S. Sergeev for his assistance in RS measurements.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Saddle point excitonic resonances in BiI3 layered single crystals	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA