Evaluation of the efficiency of interband radiative recombination in high quality Si

dc.contributor.author	Sachenko, A.V.
dc.contributor.author	Kryuchenko, Yu.V.
dc.date.accessioned	2017-06-11T13:39:42Z
dc.date.available	2017-06-11T13:39:42Z
dc.date.issued	1999
dc.identifier.citation	Evaluation of the efficiency of interband radiative recombination in high quality Si / A.V. Sachenko, Yu.V. Kryuchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 55-60. — Бібліогр.: 17 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 72.20.J, 78.55, 78.60
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/120242
dc.description.abstract	It is shown theoretically that quantum efficiency of interband radiation in highly purified silicon with low concentration of deep impurities and defects can exceed 10% at room temperatures in the case of negligibly small surface recombination. Dependencies of quantum efficiency on intensity and wavelength of exciting monochromatic light, surface recombination rate and thickness of silicon plate are discussed.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Evaluation of the efficiency of interband radiative recombination in high quality Si	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA