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dc.contributor.author Berestok, T.O.
dc.contributor.author Kurbatov, D.I.
dc.contributor.author Opanasyuk, N.M.
dc.contributor.author Opanasyuk, A.S.
dc.date.accessioned 2017-06-05T19:10:43Z
dc.date.available 2017-06-05T19:10:43Z
dc.date.issued 2015
dc.identifier.citation Influence of solution precursors on structure of ZnO films / T.O. Berestok, D.I. Kurbatov, N.M. Opanasyuk, A.S. Opanasyuk // Functional Materials. — 2015. — Т. 22, № 1. — С. 93-99. — Бібліогр.: 25 назв. — англ. uk_UA
dc.identifier.issn 1027-5495
dc.identifier.other DOI: http://dx.doi.org/10.15407/fm22.01.093
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/119303
dc.description.abstract In the work using high resolution scanning electron microscopy and X-ray analysis, we carry out the studying of the correlation between chemical and technological conditions of deposition, the initial solution composition and structural properties of the synthesized samples of zinc oxide. Growth of the layers depends on the initial precursors and it occurs through formation of the ordered array of nanorods and nanoflowers. It is shown that it is possible to choose the optimal conditions to obtain ZnO films with controlled structural properties that can be used as the base layers in microelectronic devices. uk_UA
dc.language.iso en uk_UA
dc.publisher НТК «Інститут монокристалів» НАН України uk_UA
dc.relation.ispartof Functional Materials
dc.subject Technology uk_UA
dc.title Influence of solution precursors on structure of ZnO films uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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