Показати простий запис статті
dc.contributor.author |
Berestok, T.O. |
|
dc.contributor.author |
Kurbatov, D.I. |
|
dc.contributor.author |
Opanasyuk, N.M. |
|
dc.contributor.author |
Opanasyuk, A.S. |
|
dc.date.accessioned |
2017-06-05T19:10:43Z |
|
dc.date.available |
2017-06-05T19:10:43Z |
|
dc.date.issued |
2015 |
|
dc.identifier.citation |
Influence of solution precursors on structure of ZnO films / T.O. Berestok, D.I. Kurbatov, N.M. Opanasyuk, A.S. Opanasyuk // Functional Materials. — 2015. — Т. 22, № 1. — С. 93-99. — Бібліогр.: 25 назв. — англ. |
uk_UA |
dc.identifier.issn |
1027-5495 |
|
dc.identifier.other |
DOI: http://dx.doi.org/10.15407/fm22.01.093 |
|
dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/119303 |
|
dc.description.abstract |
In the work using high resolution scanning electron microscopy and X-ray analysis, we carry out the studying of the correlation between chemical and technological conditions of deposition, the initial solution composition and structural properties of the synthesized samples of zinc oxide. Growth of the layers depends on the initial precursors and it occurs through formation of the ordered array of nanorods and nanoflowers. It is shown that it is possible to choose the optimal conditions to obtain ZnO films with controlled structural properties that can be used as the base layers in microelectronic devices. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
НТК «Інститут монокристалів» НАН України |
uk_UA |
dc.relation.ispartof |
Functional Materials |
|
dc.subject |
Technology |
uk_UA |
dc.title |
Influence of solution precursors on structure of ZnO films |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
Файли у цій статті
Ця стаття з'являється у наступних колекціях
Показати простий запис статті