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dc.contributor.author Kovalenko, S.A.
dc.date.accessioned 2017-06-05T17:41:42Z
dc.date.available 2017-06-05T17:41:42Z
dc.date.issued 2001
dc.identifier.citation Descartes-Snell law of refraction with absorption / S.A. Kovalenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 214-218. — Бібліогр.: 18 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS: 78.20.C
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/119280
dc.description.abstract The state of the art in the theory of optical constants of matter is considered for different spectral ranges of light absorption. It is stressed that up to now no there exists no commonly accepted formula for calculation of refractive index in the X-ray region. Starting from three different approaches, an analysis is made of relations between the angles of refraction and incidence in the case of a transparent medium-absorbing medium interface. Through analysis of the corresponding plots each of relations is estimated from the standpoint of possibility for its practical application. A novel version of the Descartes-Snell law is advanced. For the first time an expression (15) is obtained that is completely substantiated, both mathematically and physically. It may be recommended for use, first of all, when calculating multiplayer coatings in the X-ray optics units. It is stated that further investigations in this area are required, especially when performing experiments for different regions of optical and X-ray spectra. uk_UA
dc.description.sponsorship The author is grateful to М.Р. Lisitsa and G.G. Tarasov for fruitful discussions and help in work. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Descartes-Snell law of refraction with absorption uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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