Technology and experimental studies of contacts for microwave diodes based on interstitial phases

Abstract

We consider some aspects of manufacturing technology for films of refractory metals nitrides and borides. These films are used for barrier and ohmic contacts, as well as contacts with antidiffusion layers in gallium arsenide and silicon epitaxial structures that are used to produce microwave diodes. We investigated the properties of sputtered films and metal-semiconductor interfaces, as well as electrophysical parameters of contact structures and IMPATT diodes. The contact structures based on titanium borides and nitrides and zirconium borides are shown to have high thermal stability.