Short-wave photodetectors based on fine grain-sized poly-Si films

dc.contributor.author	Agaev, F.G.
dc.date.accessioned	2017-06-05T16:35:15Z
dc.date.available	2017-06-05T16:35:15Z
dc.date.issued	2001
dc.identifier.citation	Short-wave photodetectors based on fine grain-sized poly-Si films / F.G. Agaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 91-92. — Бібліогр.: 5 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 85.60.D
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119251
dc.description.abstract	Photoelectric properties of polycrystalline silicon films under illumination were investigated. It was shown that polysilicon films with fine grain sizes may be used as short-wave photodetectors, due to presence of shallow p-n junctions at their grain boundaries.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Short-wave photodetectors based on fine grain-sized poly-Si films	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA