Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7
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Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 4
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dc.contributor.author	Mateleshko, N.
dc.contributor.author	Mitsa, V.
dc.contributor.author	Stronski, A.
dc.contributor.author	Veres, M.
dc.contributor.author	Koos, M.
dc.contributor.author	Andriesh, A.M.
dc.date.accessioned	2017-06-05T14:24:02Z
dc.date.available	2017-06-05T14:24:02Z
dc.date.issued	2004
dc.identifier.citation	Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass / N. Mateleshko, V. Mitsa, A. Stronski, M. Veres, M. Koos, A.M. Andriesh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 462-464. — Бібліогр.: 5 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 61.43.Dq; 78.30.Ly
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119225
dc.description.abstract	In this report, the comparative analysis using Raman spectroscopy of the short-range order in amorphous As₂S₃ films deposited with different evaporation rates, volume glass and fiber based on this glass is presented. With increasing the film deposition rate, their structure becomes more non-uniform as compared to that of glass. Raman spectra excited by laser radiation with energy bigger than the width of the optical gap indicate photomodification of the structure of As₂S₃ glass and fiber based on it.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Nano-sized phase inclusions in As₂S₃ glass, films and fibers based on this glass	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA