Chemical dynamic polishing CdTe and CdxHg₁–xTe single crystals by using solutions of H₂O₂–HCl–tartaric acid system

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7
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Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 4
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dc.contributor.author	Tomashik, Z.F.
dc.contributor.author	Lukiyanchuk, E.M.
dc.contributor.author	Tomashik, V.M.
dc.date.accessioned	2017-06-05T14:19:43Z
dc.date.available	2017-06-05T14:19:43Z
dc.date.issued	2004
dc.identifier.citation	Chemical dynamic polishing CdTe and CdxHg₁–xTe single crystals by using solutions of H₂O₂–HCl–tartaric acid system / Z.F. Tomashik, E.M. Lukiyanchuk, V.M. Tomashik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 452-455. — Бібліогр.: 6 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 81.65.Cf; 42.86.+b
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119223
dc.description.abstract	Dissolution of CdTe and CdxHg₁–xTe single crystals by using solutions of H₂O₂– HCl–tartaric acid system has been studied. The surfaces of equal etching rates were constructed and the limiting stages of the dissolution process were ascertained. Also determined were the concentration limits for the solutions that can be used for chemical polishing the above-mentioned semiconductor materials.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Chemical dynamic polishing CdTe and CdxHg₁–xTe single crystals by using solutions of H₂O₂–HCl–tartaric acid system	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA