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періодичних видань НАН України
періодичних видань НАН України
Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 3
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| dc.contributor.author | Avdeev, S.P. | |
| dc.contributor.author | Agueev, O.A. | |
| dc.contributor.author | Konakova, R.V. | |
| dc.contributor.author | Kudryk, Ya.Ya. | |
| dc.contributor.author | Lytvyn, O.S. | |
| dc.contributor.author | Lytvyn, P.M. | |
| dc.contributor.author | Milenin, V.V. | |
| dc.contributor.author | Sechenov, D.A. | |
| dc.contributor.author | Svetlichny, A.M. | |
| dc.contributor.author | Soloviev, S.I. | |
| dc.contributor.author | Sudarshan, T.S. | |
| dc.date.accessioned | 2017-06-04T16:00:24Z | |
| dc.date.available | 2017-06-04T16:00:24Z | |
| dc.date.issued | 2004 | |
| dc.identifier.citation | Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters / S.P. Avdeev, O.A. Agueev, R.V. Konakova, Ya.Ya. Kudryk, O.S. Lytvyn, P.M. Lytvyn, V.V. Milenin, D.A. Sechenov, A.M. Svetlichny, S.I. Soloviev, T.S. Sudarshan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 3. — С. 272-278. — Бібліогр.: 30 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS: 73.40.Cg | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/119122 | |
| dc.description.abstract | We present experimental investigations of the effect of rapid thermal treatment with incoherent IR radiation, as well as electric-spark and electron-beam treatments, on the electric parameters of Ni(Ti) n-21R(6H)-SiC contacts. The results obtained show that pulse thermal treatment is an efficient technique for local change of parameters of heterogeneous metal/silicon carbide structures. | uk_UA |
| dc.description.sponsorship | The authors are indebted to Dr. Phys.-Math. Sci. P.А. Аlexandrov for provision of investigation of 21R-SiC samples and his permanent interest to this work. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
