Electron-electron drag in crystals with multivalley band

dc.contributor.author	Boiko, I.I.
dc.date.accessioned	2017-05-31T19:39:08Z
dc.date.available	2017-05-31T19:39:08Z
dc.date.issued	2009
dc.identifier.citation	Electron-electron drag in crystals with multivalley band / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 3. — С. 212-217. — Бібліогр.: 8 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.72, 72.20
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118864
dc.description.abstract	Mobility of electrons in multivalley bands of Si and Ge is considered with due regard for intervalley drag. It is shown that drag sufficiently diminishes electron mobility at low temperatures. This effect is clearer pronounced in germanium than in silicon.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Electron-electron drag in crystals with multivalley band	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA