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dc.contributor.author |
Dan’ko, V.A. |
|
dc.contributor.author |
Indutnyi, I.Z. |
|
dc.contributor.author |
Myn’ko, V.I. |
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dc.contributor.author |
Shepeliavyi, P.E. |
|
dc.contributor.author |
Lukyanyuk, M.V. |
|
dc.contributor.author |
Litvin, O.S. |
|
dc.date.accessioned |
2017-05-31T05:19:50Z |
|
dc.date.available |
2017-05-31T05:19:50Z |
|
dc.date.issued |
2012 |
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dc.identifier.citation |
Photostimulated etching of germanium chalcogenide films / V.A. Dan’ko, I.Z. Indutnyi, V.I. Myn’ko, P.E. Shepeliavyi, M.V. Lukyanyuk, O.S. Litvin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 345-350. — Бібліогр.: 27 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS 81.65.Cf |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118724 |
|
dc.description.abstract |
The new effect of photostimulated dissolution of as-evaporated and annealed
Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate
increases with the illumination intensity, and its spectral dependence is correlated with
absorption in the film at the absorption edge. A possible mechanism for the photoinduced
etching of ChG films has been discussed. The high-frequency diffraction gratings on
germanium ChG – more environmentally acceptable compounds than traditionally used
arsenic chalcogenides – were recorded using the method of interference immersion
photolithography with photoinduced etching. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Photostimulated etching of germanium chalcogenide films |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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