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періодичних видань НАН України
періодичних видань НАН України
Photoluminescence studies of CdTe polycrystalline films
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2012, том 15
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 4
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| dc.contributor.author | Tetyorkin, V.V. | |
| dc.contributor.author | Sukach, A.V. | |
| dc.contributor.author | Stariy, S.V. | |
| dc.contributor.author | Boiko, V.A. | |
| dc.date.accessioned | 2017-05-31T05:18:38Z | |
| dc.date.available | 2017-05-31T05:18:38Z | |
| dc.date.issued | 2012 | |
| dc.identifier.citation | Photoluminescence studies of CdTe polycrystalline films / V.V. Tetyorkin, A.V. Sukach, S.V. Stariy and V.A. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 40-44. — Бібліогр.: 28 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 78.55.E | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/118723 | |
| dc.description.abstract | Photoluminescence (PL) studies of CdTe polycrystalline films are reported. The films were grown using the modified close space sublimation technique on sapphire substrates. The mean grain size in the investigated films was ranged from 10 up to 360 μm. The distinct spectral bands around 1.580 and 1.440 eV were observed at 77 K. These bands are attributed to shallow bound excitons at dislocations and deep defects, respectively. The intensity of luminescence related to dislocation defects is found to be proportional to the density of grain boundaries. The nature of grain boundaries in the investigated films has been briefly discussed. | uk_UA |
| dc.description.sponsorship | This work is a part of the research work M310. The authors are grateful to our colleagues F. Sizov and G. Shepelskii for helpful discussions and technical support. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | Photoluminescence studies of CdTe polycrystalline films | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
