Наукова електронна бібліотека
періодичних видань НАН України

Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements

Репозиторій DSpace/Manakin

Показати простий запис статті

dc.contributor.author Kavetskyy, T.S.
dc.contributor.author Tsmots, V.M.
dc.contributor.author Stepanov, A.L.
dc.date.accessioned 2017-05-31T05:15:55Z
dc.date.available 2017-05-31T05:15:55Z
dc.date.issued 2012
dc.identifier.citation Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements / T.S. Kavetskyy, V.M. Tsmots, A.L. Stepanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 310-320. — Бібліогр.: 43 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS 61.05.cp, 61.43.Fs, 61.80.Ed
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/118720
dc.description.abstract Local atomic structure of GexAs₄₀-xS₆₀ glasses (x = 16, 24, 32, and 36) has been investigated in the -irradiated (2.41 MGy dose) and annealed after irradiation states by using the high-energy synchrotron X-ray diffraction technique. The accumulated dose of 2.41 MGy is chosen to be close to the known in literature focal point (~2.0 MGy) for the system tested, at which the y-irradiation-induced optical (darkening) effect does not depend on the composition. It is established that the first sharp diffraction peak (FSDP) is located at around 1.1 Е - in the structure factors S(Q) of all the alloys studied. The FSDP position is found to be constant on radiation/annealing treatment, but the intensity of the FSDP reveals changes under irradiation/annealing only for the compositions with x = 16 and 24. The radiation/annealing-induced changes are also observed on the pair distribution functions in the first and second coordination shells for these compounds. Practically invisible effects on the FSDP and pair distribution functions are found for the alloys with x = 32 and 36. The radiation/annealing-induced structural changes detected mainly in the As - S sub-system of the glasses examined are well explainable within the Tanaka approach for interpretation of the photo-induced structural changes and related phenomena in As₂S₃ chalcogenide glass and similar materials uk_UA
dc.description.sponsorship The authors would like to thank Dr. Ivan Kaban (IFW Dresden, Germany) for his help with high-energy synchrotron XRD measurements, Dr. Pal Jóvári (Research Institute for Solid State Physics and Optics, Budapest, Hungary) for his help with experimental data treatment, Prof. Walter Hoyer (Institute of Physics, TU Chemnitz, Germany) and Prof. Guorong Chen (East China University of Science and Technology, Shanghai, China) for stimulating discussions. The investigated samples used for measurements were prepared within joint research projects (#0106U007386 and #0109U007446c) between Ivan Franko Drohobych State Pedagogical University (Drohobych, Ukraine) and Scientific Research Company “Carat” (Lviv, Ukraine) supported by the Ministry of Education and Science of Ukraine (#0106U007385 and #0109U007445). T.S.K. acknowledges DAAD for support of his research work at TU Chemnitz (Germany) and Deutsches ElektronenSynchrotron DESY for support of the experiments performed at HASYLAB (Hamburg, Germany). T.S.K. and V.M.T. acknowledge national project (#0111U001021) supported by the Ministry of Education and Science, Youth and Sport of Ukraine. A.L.S. grateful to the Alexander von Humboldt Foundation, DFG and DAAD (Germany). Support from the Ukrainian-Russian projects funded by the State Fund for Fundamental Researches of Ukraine (#F40.2/019) and the Ministry of Education and Science of the Russian Federation (#02.740.11.0797) and the Russian Foundation for Basic Research (#11-02-90420-Ukraine, #11-02-91341-Germany and #12-02-00528-a) is also gratefully acknowledged. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


Файли у цій статті

Ця стаття з'являється у наступних колекціях

Показати простий запис статті

Пошук


Розширений пошук

Перегляд

Мій обліковий запис