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dc.contributor.author Kiselov, V.S.
dc.contributor.author Yukhymchyk, V.A.
dc.contributor.author Poludin, V.I.
dc.contributor.author Tryus, M.P.
dc.contributor.author Belyaev, A.E.
dc.date.accessioned 2017-05-31T05:12:39Z
dc.date.available 2017-05-31T05:12:39Z
dc.date.issued 2012
dc.identifier.citation Biomorphic SiC from peas and beans / V.S. Kiselov, V.A. Yukhymchyk, V.I. Poludin, M.P. Tryus, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 305-309. — Бібліогр.: 18 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS 77.84.Bw, 82.80.Gk
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/118717
dc.description.abstract Biomorphic porous SiC ceramics produced by impregnation with liquid or vapor silicon of carbon matrices derived from peas (Pisum sativum L.) and beans (Phaseolus) precursors were investigated. Optical and scanning electron microscopy was used to study the structure of ceramics. It was shown that SiC ceramics made from endosperm of peas and beans seeds has inherited the alveolate structure and possesses many hierarchical pores with diameters varying between 20 to 100 µm. Raman spectroscopy investigations showed that the 3C polytype is formed at a synthesis temperature of about 1550 ⁰C, and that both 3C and 6H-SiC are formed at temperatures of about 1800 ⁰C. It is shown possibilities of production of ceramic articles of various forms from seeds. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Biomorphic SiC from peas and beans uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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