Показати простий запис статті
dc.contributor.author |
Boichuk, V.I. |
|
dc.contributor.author |
Bilynskyi, I.V. |
|
dc.contributor.author |
Leshko, R.Ya. |
|
dc.date.accessioned |
2017-05-30T19:52:21Z |
|
dc.date.available |
2017-05-30T19:52:21Z |
|
dc.date.issued |
2009 |
|
dc.identifier.citation |
Hydrogenic impurity in a bilayer spherical quantum dot /V.I. Boichuk, I.V. Bilynskyi, R.Ya. Leshko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 155-161. — Бібліогр.: 14 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
|
dc.identifier.other |
PACS 73.21.La |
|
dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118693 |
|
dc.description.abstract |
In the work, on the basis of the exact solution of the Poisson equation for a
bilayer quantum dot with a positively charged donor ion in its centre, determined is the
potential energy of interaction of this impurity ion with electron, taking into account
different known values of Si and SiO₂ dielectric permittivities. Using the found potential
energy, the Schrödinger equation for the hydrogenic impurity in this system is solved
exactly. The influence of external and internal radii on the electron spectrum is
investigated. Described is the dependence of a squared matrix element for the dipole
moment of interlevel transitions on the external and internal radii of the
nanoheterosystem |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Hydrogenic impurity in a bilayer spherical quantum dot |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
Файли у цій статті
Ця стаття з'являється у наступних колекціях
Показати простий запис статті