Chemical treatment of monocrystalline cadmium telluride and Cd₁₋xMnxTe solid solutions by Н₂О₂–НІ–citric acid etchant compositions

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2009, том 12
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Semicond. Physics Quantum Electronics & Optoelectronics, 2009, № 2
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Chemical treatment of monocrystalline cadmium telluride and Cd₁₋xMnxTe solid solutions by Н₂О₂–НІ–citric acid etchant compositions

Denysyuk, R.O. ; Tomashik, V.M. ; Tomashik, Z.F. ; Chernyuk, O.S. ; Grytsiv, V.I.

Інший ID: PACS 81.65.Cf, 42.86.+b

URI: http://dspace.nbuv.gov.ua/handle/123456789/118685

Посилання: Chemical treatment of monocrystalline cadmium telluride and Cd₁₋xMnxTe solid solutions by Н₂О₂–НІ–citric acid etchant compositions / R.O. Denysyuk, V.M. Tomashik, Z.F. Tomashik, O.S. Chernyuk, V.I. Grytsiv // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 125-128. — Бібліогр.: 9 назв. — англ.

Дата: 2009

Завантажень: 496

Chemical treatment of monocrystalline cadmium telluride and Cd₁₋xMnxTe solid solutions by Н₂О₂–НІ–citric acid etchant compositions

Анотація:

Dissolution of CdTe and Cd₁₋xMnxTe single crystals in aqueous solutions of Н₂О₂–НІ–citric acid system has been studied. The surfaces of equal etching rates were constructed and the limiting stages of the dissolution process were ascertained. Also determined were the concentration limits for the solutions that can be used for chemical polishing the above-mentioned semiconductor materials.

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