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Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations

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dc.contributor.author Morozovska, A.N.
dc.contributor.author Svechnikov, G.S.
dc.contributor.author Shishkin, E.I.
dc.contributor.author Shur, V.Y.
dc.date.accessioned 2017-05-30T19:39:06Z
dc.date.available 2017-05-30T19:39:06Z
dc.date.issued 2009
dc.identifier.citation Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations / A.N. Morozovska, G.S. Svechnikov, E.I. Shishkin, V.Y. Shur // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 116-124. — Бібліогр.: 23 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS 77.80.Fm, 77.22.Ej
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/118683
dc.description.abstract In the paper we adopt the analytical Landau-Ginzburg-Devonshire theory to describe the ferroelectric domain structure formation using Scanning Probe Microscopy. We calculate the effective local piezoresponse of the domain structure within the decoupling approximation using the conventional relation between piezoelectric tensor components and the spontaneous polarization vector. The depth profile of the polarization distribution was derived from the nonlinear Landau-Ginzburg-Devonshire equation. We demonstrate that depending on the material parameters such as the intrinsic domain wall width and probe apex geometry, the shape of the nucleating nanodomains induced by the probe can be either oblate or prolate. The derived analytical expressions for the polarization redistribution caused by the biased probe are valid for both first and second order ferroelectrics. uk_UA
dc.description.sponsorship Authors gratefully acknowledge financial support from National Academy of Science of Ukraine, joint RussianUkrainian grant NASU N 17-Ukr_a (RFBR N 08-02- 90434). uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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