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Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2008, том 11
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2008, № 1
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Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base
Інший ID:
PACS 73.63.Hs, 84.60.Jt, 71.55.Cn, 71.55.Eq
Посилання:
Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base / A.V. Sachenko, I.O. Sokolovskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 1-5. — Бібліогр.: 7 назв. — англ.
Дата:
2008
Переглядів:
593
Завантажень:
368
Анотація:
Analytical expressions for the maximum obtainable photoconversion
efficiency of quantum-well solar cells (QWSCs) under AM0 conditions are given. The
modeling of the photoconversion efficiency of QWSCs under AM1.5 conditions using
the SimWindows program is fulfilled. It is shown that the photoconversion efficiency of
QWSCs with the A₃B₅ p-i-n structure is rather low because of a low photovoltage value.
To improve this situation, the base region should be doped heavily enough. Light
concentration makes it possible to realize high photoconversion efficiencies for A₃B₅
quantum-well p-i-n structures with a low background level of the base region doping.
Their values are comparable to the photoconversion efficiencies for solar cells (SCs) with
rather high base region doping levels.
