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dc.contributor.author |
Okhrimenko, O.B. |
|
dc.date.accessioned |
2017-05-30T14:27:20Z |
|
dc.date.available |
2017-05-30T14:27:20Z |
|
dc.date.issued |
2014 |
|
dc.identifier.citation |
A model for non-thermal action of microwave radiation
on oxide film/semiconductor structures / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 227-231. — Бібліогр.: 26 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
|
dc.identifier.other |
PACS 78.70.Fy, 78.70.Gq |
|
dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118513 |
|
dc.description.abstract |
A model is considered that explains mechanism of non-thermal action of
microwave radiation on the thin SiO₂ (ТiO₂, Er₂O₃, Gd₂O₃) film/SiC and SiO₂/GaAs
structures. It assumes that the centers of electron-hole recombination are redistributed
because of resonance interaction between dislocations of certain length and microwave
radiation. As a result, additional bands appear in photoluminescence (PL) spectra of the
oxide film/SiC structures or intensities of some bands are redistributed in the PL spectra of
the SiO₂/GaAs structure, as well as optical density of the oxide film/SiC structures changes. |
uk_UA |
dc.description.sponsorship |
The author is indebted to Prof. A.M. Svetlichnyi for his
interest in this work and valuable discussions |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
A model for non-thermal action of microwave radiation on oxide film/semiconductor structures |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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