Influence of weak magnetic fields treatment on photoluminescence of GaAs

dc.contributor.author	Red'ko, S.M.
dc.date.accessioned	2017-05-30T14:16:10Z
dc.date.available	2017-05-30T14:16:10Z
dc.date.issued	2014
dc.identifier.citation	Influence of weak magnetic fields treatment on photoluminescence of GaAs / S.M. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 272-274. — Бібліогр.: 4 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 78.55.Cr, 71.55.Eq
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118498
dc.description.abstract	Long-term transformations in photoluminescence of GaAs single crystals treated with pulsed weak magnetic fields have been obtained. Treatments were performed in the multi-pulse (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) regime. The defect structure transformations were inferred from the radiative recombination spectra within the range 0.6 to 2.5 μm at 300 and 77 K. A possible mechanism of the observed modifications related with electron-spin transformation is discussed.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Influence of weak magnetic fields treatment on photoluminescence of GaAs	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA