Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm

dc.contributor.author	Dobrovolskyi, Yu.
dc.contributor.author	Pidkamin, L.
dc.contributor.author	Brus, V.
dc.contributor.author	Kuzenko, V.
dc.date.accessioned	2017-05-30T14:11:53Z
dc.date.available	2017-05-30T14:11:53Z
dc.date.issued	2014
dc.identifier.citation	Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm / Yu. Dobrovolskyi, L. Pidkamin, V. Brus, V. Kuzenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 256-259. — Бібліогр.: 13 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.80.Ba, 85.60.Dw
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118492
dc.description.abstract	A mathematical model of the construction of silicon photodiode based on epitaxial structure enabling to regulate the absorption edge of silicon in the long-wave spectral range is presented. The suggested model allows calculating the construction that possesses low sensitivity for the wavelengths larger than 600 nm and maximal values near the wavelength 254 nm.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA