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dc.contributor.author |
Sukach, A. |
|
dc.contributor.author |
Tetyorkin, V. |
|
dc.contributor.author |
Voroschenko, A. |
|
dc.contributor.author |
Tkachuk, A. |
|
dc.contributor.author |
Kravetskii, M. |
|
dc.contributor.author |
Lucyshyn, I. |
|
dc.date.accessioned |
2017-05-30T10:21:08Z |
|
dc.date.available |
2017-05-30T10:21:08Z |
|
dc.date.issued |
2014 |
|
dc.identifier.citation |
Carrier transport mechanisms in InSb diffusion p-n junctions / A. Sukach, V. Tetyorkin, A. Voroschenko, A. Tkachuk, M. Kravetskii, I. Lucyshyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 325-330. — Бібліогр.: 25 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
|
dc.identifier.other |
PACS 73.40.Kp, 73.40.Gk |
|
dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118416 |
|
dc.description.abstract |
The linearly-graded p-n junctions were prepared by diffusion of cadmium into
n-InSb(100) substrate with the electron concentration n ~ 1.6*10¹⁵ cm⁻³ at the
temperature T = 77 K. Passivation and protection of mesa structures have been carried
out using thin films of CdTe. Forward and reverse current-voltage characteristics were
investigated within the temperature range 77…156 K. It has been found that the total
dark current consists of generation-recombination and tunneling current components,
which are dominant at high (T = 120…156 K) and low (T < 120 K) temperatures,
respectively. Experimental results have been explained using the model of a
nonhomogeneous p-n junction. It has been shown that in the linearly-graded p-n junction
with the rather thick (~1 m) depletion region tunneling current flows through the states
related to dislocations in the depletion region. The performed estimation of electrical
parameters of diffusion InSb p-n junctions allows to predict behavior of InSb-based
photodiodes at operation temperatures T > 77 K. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Carrier transport mechanisms in InSb diffusion p-n junctions |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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