Intensities of quantum transitions in hexagonal nanotubes within the exciton spectral range

dc.contributor.author	Makhanets, O.M.
dc.contributor.author	Tsiupak, N.R.
dc.contributor.author	Voitsekhivska, O.M.
dc.date.accessioned	2017-05-29T16:37:43Z
dc.date.available	2017-05-29T16:37:43Z
dc.date.issued	2012
dc.identifier.citation	Intensities of quantum transitions in hexagonal nanotubes within the exciton spectral range / O.M. Makhanets, N.R. Tsiupak, O.M. Voitsekhivska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 156-161. — Бібліогр.: 10 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 73.21.Hb, 73.21.-b, 78.67.Ch
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118304
dc.description.abstract	The theory of exciton spectrum and intensities of interband quantum transitions in multi-shell hexagonal semiconductor nanotube is developed within the effective masses and rectangular potentials approximations using Bethe variational method. The obtained theoretical results well explain the experimental position of luminescence peak for GaAs/AlxGa₁-xAs nanotubes.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Intensities of quantum transitions in hexagonal nanotubes within the exciton spectral range	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA