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dc.contributor.author |
Jivani, A.R. |
|
dc.contributor.author |
Jani, A.R. |
|
dc.date.accessioned |
2017-05-29T14:31:48Z |
|
dc.date.available |
2017-05-29T14:31:48Z |
|
dc.date.issued |
2012 |
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dc.identifier.citation |
Phase diagrams of Si₁-xGex solid solution: a theoretical approach / A.R. Jivani, A.R. Jani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 17-20. — Бібліогр.: 14 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
|
dc.identifier.other |
PACS 64.70.kg, 64.75.Nx, 71.15.Nc, Dx |
|
dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118268 |
|
dc.description.abstract |
In this work, we have used the pseudo-alloy atom model and higher-order
perturbation theory based on pseudopotential approach to investigate phase diagram at
different temperatures for Si₁–xGex solid solution system where x is the arbitrary (atomic)
concentration of the second constituting element. We have also investigated the phase
diagram near the melting temperature as well as at low temperatures and compared with
the available experimental results. Our calculated phase diagram near the melting point
agrees well with the experimental data. |
uk_UA |
dc.description.sponsorship |
A.R. Jivani thanks University Grants Commission, New
Delhi, India, for financial support (Grant No. 47-
625/08(WRO)) to carry out this research work. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Phase diagrams of Si₁-xGex solid solution: a theoretical approach |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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