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Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2012, том 15
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 1
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Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters
Інший ID:
PACS 61.72, 81.65.Tx
Посилання:
Characteristics of gettering process in multicrystalline Si wafers with
combined porous Si/Al getters / Sarikov, V. Naseka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 8-12. — Бібліогр.: 11 назв. — англ.
Підтримка:
This work has been carried out in the framework of the
State Targeted Scientific and Technological Program
“Creation of Chemical and Metallurgical Branch of the
Production of Pure Silicon Material” during 2011 to
2015 (project − 3.31 “Development and implementation
of the technology for the formation of stress-free
homogeneous Si ingots”)
Дата:
2012
Переглядів:
884
Завантажень:
334
Анотація:
In this work, the gettering process in the multicrystalline Si wafers by the combined getter structures of the porous Si and Al layers during annealings at temperatures 600 up to 750 °C has been theoretically studied. A kinetic model based on the diffusion equation has been developed, and the characteristics of increase in the minority charge carrier diffusion length as a result of gettering annealings have been determined. The obtained results are useful for technology of multicrystalline Si solar cells to improve their properties.
