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Experimental and theoretical study of stimulated Raman scattering indicatrix asymmetry

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dc.contributor.author Dmitriev, M.V.
dc.contributor.author Isaienko, O.Iu.
dc.contributor.author Ivanisik, А.І.
dc.contributor.author Korotkov, P.A.
dc.date.accessioned 2017-05-29T14:09:50Z
dc.date.available 2017-05-29T14:09:50Z
dc.date.issued 2012
dc.identifier.citation Experimental and theoretical study of stimulated Raman scattering indicatrix asymmetry / M. V. Dmitriev, O. Iu. Isaienko, А. І. Ivanisik, P. A. Korotkov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 44-47. — Бібліогр.: 9 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS 42.65.Dr
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/118256
dc.description.abstract The paper provides experimental and theoretical results of stimulated Raman scattering Stokes component indicatrix asymmetry study. Theoretical results demonstrate that asymmetry is caused by influence of Stokes/anti-Stokes parametric processes. Stokes/anti-Stokes parametric process provides additional photons to the forward Stokes component. This excess of photons compared to a backward Stokes component increases due to combinational mechanism of stimulated scattering during further propagation of waves along the medium. Thus, under competition of forward and backward Stokes components generation, the process of forward stimulated Raman scattering takes significant advantage. Obtained in this paper is satisfactory matching between theoretical calculations and experimental results for benzene under excitation by laser pulses with the duration 25 ns and wavelength 694.3 nm. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Experimental and theoretical study of stimulated Raman scattering indicatrix asymmetry uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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