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періодичних видань НАН України
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SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 1
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| dc.contributor.author | Boltovets, N.S. | |
| dc.contributor.author | Ivanov, V.N. | |
| dc.contributor.author | Konakova, R.V. | |
| dc.contributor.author | Kudryk, Ya.Ya. | |
| dc.contributor.author | Milenin, V.V. | |
| dc.contributor.author | Lytvyn, O.S. | |
| dc.contributor.author | Lytvyn, P.M. | |
| dc.contributor.author | Vlaskina, S.I. | |
| dc.contributor.author | Agueev, O.A. | |
| dc.contributor.author | Svetlichny, A.I. | |
| dc.contributor.author | Soloviev, S.I. | |
| dc.contributor.author | Sudarshan, T.S. | |
| dc.date.accessioned | 2017-05-28T17:42:31Z | |
| dc.date.available | 2017-05-28T17:42:31Z | |
| dc.date.issued | 2004 | |
| dc.identifier.citation | SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers / N.S. Boltovets, V.N. Ivanov, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, O.S. Lytvyn, P.M. Lytvyn, S.I. Vlaskina, O.A. Agueev, A.I. Svetlichny, S.I. Soloviev, T.S. Sudarshan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 60-62. — Бібліогр.: 8 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS: 85.30.Kk | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/118115 | |
| dc.description.abstract | Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier heights in the formed contacts was explained by the thermal stability of an interface TiBx(ZrBx)-SiC after rapid thermal annealing at 800°N for 60 s. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
