Ferromagnetism induced in diluted A₁₋xMnxB semiconductors

dc.contributor.author	Bryksa, V.P.
dc.contributor.author	Tarasov, G.G.
dc.contributor.author	Masselink, W.T.
dc.contributor.author	Nolting, W.
dc.contributor.author	Mazur, Yu.I.
dc.contributor.author	Salamo, G.J.
dc.date.accessioned	2017-05-28T17:39:36Z
dc.date.available	2017-05-28T17:39:36Z
dc.date.issued	2004
dc.identifier.citation	Ferromagnetism induced in diluted A₁₋xMnxB semiconductors / V.P. Bryksa, G.G. Tarasov, W.T. Masselink, W. Nolting, Yu.I. Mazur, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 43-51. — Бібліогр.: 22 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 72.15.Gd; 72.20.My; 73.61.Ga
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118113
dc.description.abstract	Theoretical model has been developed for analysis of the peculiarities of new type of magnetism in diluted magnetic A₁₋xMnxB semiconductors. The coherent potential is introduced using the dynamic mean field theory (DMFT) approximation and the Baym- Kadanoff hypothesis valid for the case x < xc (xc is the percolation limit).	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Ferromagnetism induced in diluted A₁₋xMnxB semiconductors	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA