Avalanche multiplication of charge carriers in nanostructured porous silicon

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6
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Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 3
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dc.contributor.author	Timokhov, D.F.
dc.contributor.author	Timokhov, F.P.
dc.date.accessioned	2017-05-28T09:05:47Z
dc.date.available	2017-05-28T09:05:47Z
dc.date.issued	2003
dc.identifier.citation	Avalanche multiplication of charge carriers in nanostructured porous silicon / D.F. Timokhov, F.P. Timokhov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 307-310. — Бібліогр.: 14 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 72.80.Cw; 72.80.Ng; 72.40.+w; 73.40.Gk
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118035
dc.description.abstract	The phenomenon of avalanche multiplication of charge carriers in Al/PS-(c-Si) sandwich-structures based on nanostructured porous silicon (PS) is studied. Experimentally received dependences of ionization rates on intensity of an electrical field correspond to the diffusion mechanism of electron-hole pairs heating up to a threshold of ionization. The distinction of effective factors of shock ionization for electrons and holes is unsignificant. The estimation of length of free run of hot electrons is carried out at scattering of energy on the optical phonons.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Avalanche multiplication of charge carriers in nanostructured porous silicon	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA